Sample 41

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
13	16	Si wafer - not bonded	21	9	5.5	200	400	20	10	41.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 11.619 um
Calculated remaining resist as 7.69um, indicating an erosion of 1.05um in 10 minutes of etching
This equates to an erosion rate of 105 nm/min
The etch depth of 3.93um in 10 mins indicates an etch rate of 393.0nm/min
The selectivity is therefore 3.74:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	11.618900
Remaining resist (um)	7.688900
Semiconductor etched(um)	3.930000
Etch rate (nm/min)	393.000000
Erosion rate (nm/min)	105.210000
Selectivity	3.735386